R6030ENZ1C9
Manufacturer:
Rohm Semiconductor
Mfr.Part #:
R6030ENZ1C9
Datasheet:
Description:
MOSFETs TO-247AC-3 Through Hole N-Channel number of channels:1 120 W 25 V Continuous Drain Current (ID):1 mA
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 120 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 1 mA |
| FET Type(Transistor Polarity) | N-Channel |
| Drain to Source Resistance | 130 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
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